Electrical & Computer Engin 344 - Semicond Devices&Mat
Fall
2018
01
4.00
Jianhua Yang
M W F 11:15AM 12:05PM
UMass Amherst
72961
Engineering Laboratory rm 303
jjyang@umass.edu
Review of semiconductor material properties. Carrier drift, diffusion, and generation-recombination processes in semiconductor devices. Fundamental theory of operation of p-n junction diodes, bipolar junction transistors (BJTs), metal-oxide-semiconductor (MOS) structures, and field-effect transistors (FETs). Implications of nanoscale dimensions in contemporary devices.
This course is open to Senior or Junior EE-ENG and CS-ENG majors only. Pre Req: E&C-ENG 212 w/C
Multiple required components--lab and/or discussion section. To register, submit requests for all components simultaneously.